Datasheet > BC846A/E8

BC846A/E8

更新时间： 2024-01-02 11:14:13

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	219K
描述
TRANSISTOR \| BJT \| NPN \| 65V V(BR)CEO \| 100MA I(C) \| SOT-23

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技术参数
数据手册

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BC846A/E8 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	Is Samacsys：	N
最大集电极电流 (IC)：	0.1 A	配置：	Single
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.31 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

BC846A/E8 数据手册

BC846 thru BC849

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistors (NPN)

Mounting Pad Layout

0.031 (0.8)

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

0.035 (0.9)

.016 (0.4)

Top View

0.079 (2.0)

Pin Configuration

1 = Base

2 = Emitter

3 = Collector

0.037 (0.95)

Type

Marking

Type

Marking

BC846A

BC848A

Dimensions in inches

and (millimeters)

.037(0.95)

BC847A

BC849B

Features

• NPN Silicon Epitaxial Planar Transistors for switching

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

and AF amplifier applications.

• Especially suited for automatic insertion in thick and

thin-film circuits.

Mechanical Data

Case: SOT-23 Plastic Package

• These transistors are subdivided into three groups (A, B,

and C) according to their current gain. The type BC846 is

available in groups A and B, however, the types BC847 and

BC848 can be supplied in all three groups. The BC849 is a

low noise type available in groups B and C. As complementary

types, the PNP transistors BC856...BC859 are recommended.

Weight: approx. 0.008g

Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

BC846

Collector-Base Voltage

BC847

V_CBO

BC848, BC849

BC846

Collector-Emitter Voltage

BC847

V_CES

BC848, BC849

BC846

Collector-Emitter Voltage

Emitter-Base Voltage

BC847

V_CEO

BC848, BC849

BC846, BC847

BC848, BC849

V_EBO

Collector Current

I_C

I_CM

I_BM

–I_EM

P_tot

R_θJA

R_θSB

T_j

100

200

Peak Collector Current

Peak Base Current

200

Peak Emitter Current

Power Dissipation at T_SB= 50°C

200

310⁽¹⁾

450⁽¹⁾

320⁽¹⁾

150

°C/W

°C

Thermal Resistance Junction to Ambiant Air

Thermal Resistance Junction to Substrate Backside

Junction Temperature

Storage Temperature Range

T_S

–65 to +150

°C

Note: (1) Device on fiberglass substrate, see layout on third page.

Document Number 88164

09-May-02

www.vishay.com

12 3 4 5

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