BC818-16

更新时间： 2024-11-25 08:49:43

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	233K
描述
NPN Silicon General Purpose Transistors

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中文翻译

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数据手册
替代型号

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BC818-16 数据手册

BC818-16

BC818-25

BC818-40

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

NPN Silicon

General Purpose

Transistors

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Capable of 0.3Watts of Power Dissipation.

Collector-current 0.5A

•

Collector-base Voltage 30V

Operating and storage junction temperature range: -55^OC to +150^OC

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

SOT-23

Mechanical Data

•

Case: SOT-23 Molded Plastic

Terminals: Solderable per MIL-STD-202, Method 208

Weight: 0.008 grams (approx.)

Device Marking:

BC818-16

BC818-25

BC818-40

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=10uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_E=10uAdc, I _C=0)

Collector Cutoff Current

(V_CB=25Vdc,I_E=0)

Emitter Cutoff Current

5.0

---

Vdc

DIMENSIONS

INCHES

MIN

---

Vdc

DIM

MAX

MIN

2.80

2.10

1.20

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

0.1

uAdc

I_EBO

---

1.78

.45

(V_EB=4.0Vdc, I _C=0)

.0005

.035

.003

.015

.013

.89

ON CHARACTERISTICS

h_FE(1)

.085

.37

DC Current Gain

(I_C=100mAdc, V_CE=1.0Vdc)

BC818-16

BC818-25

BC818-40

DC Current Gain

(I_C=300mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I_C=500mAdc,I_B=50mAdc)

100

160

250

---

250

400

630

---

Vdc

Suggested Solder

Pad Layout

.031

.800

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

---

.035

.900

0.7

1.2

.079

2.000

inches

Base-Emitter Voltage

(V_CE=1Vdc,I_C=500mAdc)

.037

.950

SMALL SIGNAL CHARACTERISTICS

.037

.950

f_T

Transition frequency

170

---

MHz

(V_CE=5.0V, f=100MHz, I _C=50mA)

Collector output capacitance

(V_CB=10V, f=1MHz)

C_ob

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

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BC818-16 替代型号

型号	品牌	替代类型	描述	数据表
BC818K-16W	INFINEON	功能相似	NPN Silicon AF Transistor

与BC818-16相关器件

型号	品牌	获取价格	描述	数据表
BC818-16/E8	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 800MA I(C) \| SOT-23
BC818-16/E9	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 800MA I(C) \| SOT-23
BC818-16D87Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BC818-16E6327	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BC818-16E6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BC818-16L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 500MA I(C) \| SOT-23
BC818-16L99Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BC818-16LT1	MOTOROLA	获取价格	Transistor
BC81816MTF	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BC818-16S62Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon

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