Datasheet > BC81825

BC81825

更新时间： 2024-11-20 23:34:47

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描述
Obsolete - alternative part: BCW66H

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中文翻译

获取价格

数据手册

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BC81825 数据手册

SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

BC817

BC818

ISSUE 4 june 1996

✪

PARTMARKING DETAILS

BC817

6DZ

BC818

6HZ

BC817-16 6AZ

BC817-25 6BZ

BC817-40 6CZ

BC818-16 6EZ

BC818-25 6FZ

BC818-40 6GZ

COMPLEMENTARY TYPES

BC817

BC818

BC807

BC808

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

BC817

BC818

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

I_C

500

100

200

330

°C

I_B

Peak Base Current

I_BM

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector Cut-Off

Current

I_CBO

0.1

V_CB=20V, I_E=0

V_CB=20V, I_E=0, T_amb=150°C

µA

Emitter Cut-Off Current

I_EBO

V_EB=5V, I_C=0

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

700

I_C=500mA, I_B=50mA*

Base-Emitter

Turn-on Voltage

V_BE(on)

h_FE

1.2

I_C=500mA, V_CE=1V*

Static Forward Current

Transfer Ratio

100

600

I_C=100mA, V_CE=1V*

I_C=500mA, V_CE=1V*

-16

-25

-40

100

160

250

400

600

I_C=100mA, V_CE=1V*

Transition

Frequency

f_T

200

5.0

MHz I_C=10mA, V_CE=5V

f=35MHz

Collector-base

Capacitance

C_obo

I_E=I_e=0, V_CB=10V

f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3 - 10

中文翻译

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