Datasheet > BC818-25S62Z

BC818-25S62Z

更新时间： 2024-11-22 03:15:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	46K
描述
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon

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BC818-25S62Z 数据手册

BC818-25

BC818-40

SOT-23

Mark: 6F. / 6G.

NPN General Purpose Amplifier

This device is designed for general purpose medium power

amplifiers and switches requiring collector currents to 1.2 A.

Sourced from Process 38. See BC817 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CES

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.5

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BC818-25 / BC818-40

P_D

Total Device Dissipation

Derate above 25 C

350

2.8

mW/ C

Thermal Resistance, Junction to Ambient

357

R_θ

C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

12 3

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