Datasheet > BC807-16

BC807-16

更新时间： 2024-04-09 18:58:29

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	382K
描述
45V,0.5A,General Purpose PNP Bipolar Transistor

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BC807-16 数据手册

PNP Silicon Epitaxial Planar Transistor

BC807-16/-25/-40

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

BC807-16

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test Condition

I_C= -10μA, I_E= 0

Min. Typ. Max. Unit

-50

-45

-5

I_C= -10mA, I_B= 0

I_E= -10μA, I_C= 0

V_CB= -25V, I_E= 0

V_EB= -4V, I_C= 0

-100

250

400

600

I_EBO

100

160

250

100

170

197

BC807-25

V_CE= -1V, I_C= -100mA

V_CE= -1V, I_C= -300mA

352

BC807-40

418

DC Current Gain

BC807-16

BC807-25

BC807-40

h_FE

V_CE= -1V, I_C= -500mA

I_C= -500mA, I_B= -50mA

I_C= -10mA, V_CE= -5V

Collector-emitter Saturation Voltage

Base-emitter Saturation Voltage

Transition Frequency

V_CE(sat)

V_BE(sat)

f_T

-0.7

-1.2

200

MHz

Collector Output Capacitance

C_OBO

V_CB= -10V, I_E= 0, f = 1MHZ

STM0081A: June 2023 [2.1]

www.gmesemi.com

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