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BC640

更新时间: 2024-11-08 22:39:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关PC
页数 文件大小 规格书
4页 60K
描述
High Current Transistors

BC640 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-92包装说明:CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:1 week风险等级:7.54
Samacsys Description:PNP Epitaxial Silicon Transistor最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz

BC640 数据手册

 浏览型号BC640的Datasheet PDF文件第2页浏览型号BC640的Datasheet PDF文件第3页浏览型号BC640的Datasheet PDF文件第4页 
BC636, BC636-16, BC638,  
BC640, BC640-16  
High Current Transistors  
PNP Silicon  
http://onsemi.com  
COLLECTOR  
2
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
Collector-Emitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
BASE  
BC636  
BC638  
BC640  
–45  
–60  
–80  
1
Collector-Base Voltage  
Emitter-Base Voltage  
Vdc  
EMITTER  
BC636  
BC638  
BC640  
–45  
–60  
–80  
–5.0  
–0.5  
Vdc  
Adc  
Collector Current — Continuous  
I
C
Total Device Dissipation  
P
D
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
1
Total Device Dissipation  
P
2
3
@ T = 25°C  
1.5  
12  
Watts  
mW/°C  
C
Derate above 25°C  
CASE 29  
TO–92  
STYLE 14  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction to Ambient  
R
200  
°C/W  
θJA  
ORDERING INFORMATION  
Thermal Resistance,  
Junction to Case  
R
83.3  
°C/W  
θJC  
Device  
Package  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
Shipping  
BC636  
5000 Units/Box  
2000/Ammo Pack  
2000/Ammo Pack  
5000 Units/Box  
2000/Ammo Pack  
5000 Units/Box  
2000/Ammo Pack  
5000 Units/Box  
BC636ZL1  
BC636–16ZL1  
BC638  
BC638ZL1  
BC640  
BC640ZL1  
BC640–16  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
June, 2000 – Rev. 1  
BC636/D  

BC640 替代型号

型号 品牌 替代类型 描述 数据表
BC640TA ONSEMI

类似代替

PNP Bipolar Transistor
MPS4250G ONSEMI

功能相似

PNP Silicon Transistor
PN4250 FAIRCHILD

功能相似

PNP General Purpose Amplifier

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