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BC640 PDF预览

BC640

更新时间: 2024-11-06 22:39:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关PC
页数 文件大小 规格书
3页 64K
描述
PNP EPITAXIAL SILICON TRANSISTOR

BC640 数据手册

 浏览型号BC640的Datasheet PDF文件第2页浏览型号BC640的Datasheet PDF文件第3页 
BC636/638/640  
PNP EPITAXIAL SILICON TRANSISTOR  
SWITCHING AND AMPLIFIER APPLICATIONS  
· Complement to BC635/637/639  
TO-92  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector Emitter Voltage  
at RBE=1Kohm  
: BC636  
: BC638  
: BC640  
: BC636  
: BC638  
: BC640  
: BC636  
: BC638  
: BC640  
VCER  
-45  
-60  
-100  
-45  
-60  
-100  
-45  
V
V
V
V
V
V
V
V
V
Collector Emitter Voltage  
Collector Emitter Voltage  
VCES  
VCEO  
-60  
-80  
Emitter Base Voltage  
Collector Current  
Peak Collector Current  
Base Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VEBO  
IC  
ICP  
IB  
PC  
TJ  
-5  
-1  
V
A
A
mA  
W
°C  
°C  
-1.5  
-100  
1
150  
-65 ~ 150  
1. Emitter 2. Collector 3. Base  
TSTG  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
BVCEO  
Collector-Emitter Breakdown Voltage  
: BC636  
IC= -10mA, IB=0  
V
V
V
mA  
mA  
-45  
-60  
-80  
: BC638  
: BC640  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
: BC635  
ICBO  
IEBO  
hFE  
VCB= -30V, IE=0  
VEB= -5V, IC=0  
VCE= -2V, IC= -5mA  
VCE= -2V, IC= -150mA  
-0.1  
-0.1  
25  
40  
40  
25  
250  
160  
: BC637/BC639  
VCE= -2V, IC= -500mA  
IC= -500mA, IB= -50mA  
VCE= -2V, IC= -500mA  
V
V
MHz  
Collector Emitter Saturation Voltage  
Base Emitter On Voltage  
Current Gain Bandwidth Product  
VCE (sat)  
VBE (on)  
fT  
-0.5  
-1  
100  
VCE= -5V, IC= -10mA, f=50MHz  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

BC640 替代型号

型号 品牌 替代类型 描述 数据表
BC640TA ONSEMI

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