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BC639RLRP PDF预览

BC639RLRP

更新时间: 2024-11-11 13:05:51
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摩托罗拉 - MOTOROLA 晶体晶体管
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BC639RLRP 数据手册

 浏览型号BC639RLRP的Datasheet PDF文件第2页浏览型号BC639RLRP的Datasheet PDF文件第3页浏览型号BC639RLRP的Datasheet PDF文件第4页 
Order this document  
by BC635/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
2
3
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC  
BC  
BC  
635  
637  
639  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
CASE 29–04, STYLE 14  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
45  
60  
80  
45  
60  
80  
5.0  
0.5  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
Vdc  
Vdc  
Vdc  
(BR)CEO  
(I = 10 mAdc, I = 0)  
BC635  
BC637  
BC639  
45  
60  
80  
C
B
CollectorBase Breakdown Voltage  
(I = 100 µAdc, I = 0)  
V
(BR)CBO  
BC635  
BC637  
BC639  
45  
60  
80  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
5.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= 30 Vdc, I = 0)  
100  
10  
nAdc  
µAdc  
E
= 30 Vdc, I = 0, T = 125°C)  
E
A
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.  
Motorola, Inc. 1996  

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