BC559ATA

更新时间： 2024-11-29 13:05:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号双极晶体管
页数	文件大小	规格书
3页	72K
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数据手册

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BC559ATA 数据手册

PNP EPITAXIAL

BC556/557/558/559/560

SILICON TRANSISTOR

SWITCHING AND AMPLIFIER

· HIGH VOLTAGE: BC556, V_CEO= -65V

· LOW NOISE: BC559, BC560

TO-92

· Complement to BC546 ... BC 550

ABSOLUTE MAXIMUM RATINGS (T_A=25°C)

Characteristic

Symbol

V_CBO

Rating

Unit

Collector-Base Capacitance

: BC556

-80

-50

-30

: BC557/560

: BC558/559

Collector-Emitter Voltage

: BC556

V_CEO

-65

-45

: BC557/560

: BC558/559

-30

-5

-100

500

150

°C

Emitter-Base Voltage

Collector Current (DC)

Collector Dissipation

Junction Temperature

Storage Temperature

V_EBO

I_C

P_C

T_J

T_STG

-65 ~ 150

1. Collector 2. Base 3. Emitter

ELECTRICAL CHARACTERISTICS (T_A=25°C)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

I_CBO

h_FE

V_CE(sat)

Collector Cut-off Current

DC Current Gain

Collector Emitter Saturation Voltage

V_CB= -30V, I_E=0

V_CE= -5V, I_C=2mA

-15

800

-300

-650

110

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5mA

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5mA

V_CE= -5V, I_C= -2mA

V_CE= -5V, I_C= -10mA

-90

-250

-700

-900

-660

MHz

V_BE(on)

f_T

Collector Base Saturation Voltage

Base Emitter On Voltage

-750

-800

-600

150

Current Gain Bandwidth Product

Collector Base Capacitance

C_CBO

V_CB= -10V, f=1MHz

V_CE= -5V, I_C= -200mA

f=1KHz, R_G=2KW

V_CE= -5V, I_C= -200mA

R_G=2KW

Noise Figure

: BC556/557/558

: BC559/560

1.2

: BC559

: BC560

f=30~15000MHz

h_FECLASSIFICATION

Classification

h_FE

110-220

200-450

420-800

Rev. B

1999 Fairchild Semiconductor Corporation

12 3

中文翻译

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