5秒后页面跳转
BC559BD75Z PDF预览

BC559BD75Z

更新时间: 2024-11-26 03:23:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 41K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC559BD75Z 数据手册

 浏览型号BC559BD75Z的Datasheet PDF文件第2页浏览型号BC559BD75Z的Datasheet PDF文件第3页浏览型号BC559BD75Z的Datasheet PDF文件第4页 
BC556/557/558/559/560  
Switching and Amplifier  
High Voltage: BC556, V  
Low Noise: BC559, BC560  
Complement to BC546 ... BC 550  
= -65V  
CEO  
TO-92  
1. Collector 2. Base 3. Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
: BC556  
CBO  
-80  
-50  
-30  
V
V
V
: BC557/560  
: BC558/559  
Collector-Emitter Voltage  
CEO  
: BC556  
: BC557/560  
: BC558/559  
-65  
-45  
-30  
V
V
V
Emitter-Base Voltage  
-5  
-100  
V
EBO  
I
Collector Current (DC)  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
mA  
mW  
°C  
C
P
500  
C
T
T
150  
J
-65 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
-15  
Units  
I
V
V
= -30V, I =0  
nA  
CBO  
CB  
E
h
= -5V, I =2mA  
110  
800  
FE  
CE  
C
V
(sat)  
Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA  
-90  
-250  
-300  
-650  
mV  
mV  
CE  
C
B
I = -100mA, I = -5mA  
C
B
V
(sat) Collector-Base Saturation Voltage  
I = -10mA, I = -0.5mA  
-700  
-900  
mV  
mV  
BE  
BE  
C
B
I = -100mA, I = -5mA  
C
B
V
(on) Base-Emitter On Voltage  
V
= -5V, I = -2mA  
-600  
-660  
-750  
-800  
mV  
mV  
CE  
CE  
C
V
V
V
V
= -5V, I = -10mA  
C
f
Current Gain Bandwidth Product  
Output Capacitance  
= -5V, I = -10mA, f=10MHz  
150  
MHz  
pF  
T
CE  
CB  
CE  
C
C
= -10V, I =0, f=1MHz  
6
ob  
E
NF  
Noise Figure  
: BC556/557/558  
: BC559/560  
: BC559  
= -5V, I = -200µA  
2
1
1.2  
1.2  
10  
4
4
dB  
dB  
dB  
dB  
C
f=1KHz, R =2KΩ  
G
V
= -5V, I = -200µA  
CE  
C
: BC560  
R =2KΩ, f=30~15000MHz  
2
G
h
Classification  
FE  
Classification  
A
B
C
h
110 ~ 220  
200 ~ 450  
420 ~ 800  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

与BC559BD75Z相关器件

型号 品牌 获取价格 描述 数据表
BC559BDWP DIODES

获取价格

Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, 0.017 X 0.017 INCH
BC559B-E6 VISHAY

获取价格

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN
BC559B-E7 VISHAY

获取价格

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN
BC559BJ05Z TI

获取价格

PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC559BJ18Z TI

获取价格

PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC559BJ18Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
BC559BRL ONSEMI

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
BC559BRL1 ONSEMI

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
BC559BRLRA ONSEMI

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
BC559BRLRE ONSEMI

获取价格

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN