BC556B

更新时间： 2024-01-03 12:23:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
6页	162K
描述
Amplifier Transistors(PNP Silicon)

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技术参数
数据手册

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BC556B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	0.1 A
配置：	Single	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.5 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
标称过渡频率 (fT)：	150 MHz	Base Number Matches：	1

BC556B 数据手册

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(I = –10 µAdc, V

—

= –5.0 V)

BC557A

BC556B/557B/558B

BC557C

BC556

BC557

BC558

BC557A

BC556B/557B/558B

BC557C

BC557A

—

120

180

420

—

150

270

—

170

290

500

120

180

300

—

500

800

220

460

800

—

(I = –2.0 mAdc, V

= –5.0 V)

(I = –100 mAdc, V

C CE

BC556B/557B/558B

BC557C

—

Collector–Emitter Saturation Voltage

(I = –10 mAdc, I = –0.5 mAdc)

CE(sat)

—

–0.075

–0.3

–0.25

–0.3

–0.6

–0.65

(I = –10 mAdc, I = see Note 1)

(I = –100 mAdc, I = –5.0 mAdc)

Base–Emitter Saturation Voltage

(I = –10 mAdc, I = –0.5 mAdc)

BE(sat)

—

–0.7

–1.0

—

(I = –100 mAdc, I = –5.0 mAdc)

Base–Emitter On Voltage

BE(on)

(I = –2.0 mAdc, V

(I = –10 mAdc, V

= –5.0 Vdc)

–0.55

—

–0.62

–0.7

–0.82

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

MHz

(I = –10 mA, V

= –5.0 V, f = 100 MHz)

BC556

BC557

BC558

—

280

320

360

—

Output Capacitance

(V = –10 V, I = 0, f = 1.0 MHz)

—

3.0

6.0

Noise Figure

(I = –0.2 mAdc, V

= –5.0 V,

= 2.0 k , f = 1.0 kHz, ∆f = 200 Hz)

BC556

BC557

BC558

—

2.0

Small–Signal Current Gain

(I = –2.0 mAdc, V = –5.0 V, f = 1.0 kHz) BC556

—

125

240

450

—

220

330

600

500

900

260

500

900

BC557/558

BC557A

BC556B/557B/558B

BC557C

Note 1: I = –10 mAdc on the constant base current characteristics, which yields the point I = –11 mAdc, V = –1.0 V.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

123 4 5 6

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