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BC556A-TAP

更新时间: 2024-02-14 11:47:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 324K
描述
Transistor

BC556A-TAP 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.89最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):110
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.5 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

BC556A-TAP 数据手册

 浏览型号BC556A-TAP的Datasheet PDF文件第1页浏览型号BC556A-TAP的Datasheet PDF文件第3页浏览型号BC556A-TAP的Datasheet PDF文件第4页浏览型号BC556A-TAP的Datasheet PDF文件第5页浏览型号BC556A-TAP的Datasheet PDF文件第6页浏览型号BC556A-TAP的Datasheet PDF文件第7页 
BC556 to BC558  
Vishay Semiconductors  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
- VCBO  
Value  
80  
Unit  
V
Collector - base voltage  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
- VCBO  
- VCBO  
- VCES  
- VCES  
- VCES  
- VCEO  
- VCEO  
- VCEO  
- VEBO  
- IC  
50  
30  
V
V
Collector - emitter voltage  
80  
V
50  
V
30  
V
65  
V
45  
V
30  
V
Emitter - base voltage  
Collector current  
5
V
100  
200  
200  
200  
mA  
mA  
mA  
mA  
mW  
Peak collector current  
Peak base current  
Peak emitter current  
Power dissipation  
- ICM  
- IBM  
IEM  
5001)  
Tamb = 25 °C  
Ptot  
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.  
Maximum Thermal Resistance  
Parameter  
Test condition  
Symbol  
Value  
2501)  
Unit  
Thermal resistance junction to  
ambient air  
RθJA  
°C/W  
Junction temperature  
Tj  
150  
°C  
°C  
Storage temperature range  
TS  
- 65 to + 150  
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.  
Electrical DC Characteristics  
Parameter  
Test condition  
Part  
Symbol  
hfe  
Min  
Typ  
Max  
Unit  
Small signal current gain  
(current gain group A)  
- VCE = 5 V, - IC = 2 mA, f = 1 kHz  
220  
330  
600  
2.7  
4.5  
8.7  
18  
Small signal current gain  
(current gain group B)  
- VCE = 5 V, - IC = 2 mA, f = 1 kHz  
- VCE = 5 V, - IC = 2 mA, f = 1 kHz  
- VCE = 5 V, - IC = 2 mA, f = 1 kHz  
- VCE = 5 V, - IC = 2 mA, f = 1 kHz  
- VCE = 5 V, - IC = 2 mA, f = 1 kHz  
hfe  
hfe  
hie  
Small signal current gain  
(current gain group C)  
Input impedance (current gain  
group A)  
1.6  
3.2  
6
4.5  
8.5  
15  
kΩ  
kΩ  
kΩ  
µS  
µS  
µS  
Input impedance (current gain  
group B)  
hie  
Input impedance (current gain  
group C)  
hie  
Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz  
group A)  
hoe  
hoe  
hoe  
hre  
30  
Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz  
group B)  
30  
60  
Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz  
group C)  
60  
110  
1.5 x 10-4  
Reverse voltage transfer ratio  
(current gain group A)  
- VCE = 5 V, - IC = 2 mA, f = 1 kHz  
www.vishay.com  
2
Document Number 85133  
Rev. 1.2, 16-Nov-04  

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