Datasheet > BC53PAS-Q

BC53PAS-Q

更新时间： 2023-09-03 20:27:26

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	256K
描述
80 V, 1 A PNP medium power transistorsProduction

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BC53PAS-Q 数据手册

BC53xPAS-Q series

80 V, 1 A PNP medium power transistors

17 October 2022

Product data sheet

1. General description

PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D)

leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and

visible and solderable side pads.

2. Features and benefits

•

High collector current capability I_Cand I_CM

•

Reduced Printed-Circuit Board (PCB) area requirements

Exposed heat sink for excellent thermal and electrical conductivity

Two current gain selections

Leadless very small SMD plastic package with medium power capability

Suitable for Automatic Optical Inspection (AOI) of solder joint

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Linear voltage regulators

Battery driven devices

MOSFET drivers

High-side switches

Power management

Amplifiers

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-80

I_C

collector current

-1

-2

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain

BC53PAS-Q

V_CE= -2 V; I_C= -150 mA; T_amb= 25 °C [1]

250

160

250

BC53-10PAS-Q

BC53-16PAS-Q

[1]

100

[1] pulsed; t_p≤ 300 µs; δ ≤ 0.02

12 3 4 5 6 7...11

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