Datasheet > BC546

BC546

更新时间： 2024-01-18 02:54:28

品牌	Logo	应用领域
TGS		晶体晶体管
页数	文件大小	规格书
1页	299K
描述
TO-92 Plastic-Encapsulate Transistors (NPN)

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中文翻译

获取价格

数据手册

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BC546 数据手册

TIGER ELECTRONIC CO.,LTD

TO-92 Plastic-Encapsulate Transistors

BC546/BC547/BC548 ^{TRANSISTOR (NPN)}

TO-92

FEATURES

High Voltage

Complement to BC556,BC557,BC558

1. COLLECTOR

2. BASE

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

3. EMITTER

Collector-Base Voltage

BC546

BC547

BC548

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

BC546

BC547

BC548

V_CEO

100

V_EBO

I_C

℃

Collector Current -Continuous

Total Device Dissipation

Junction Temperature

625

P_D

150

T_J

Storage Temperature

-55-150

T_stg

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

BC546

BC547

BC548

V_CBO

I_C= 100μA , I_E=0

Collector-emitter breakdown voltage

BC546

BC547

BC548

V_CEO

V_EBO

I_CBO

I_C= 1mA , I_B=0

Emitter-base breakdown voltage

Collector cut-off current

I_E= 10μA, I_C=0

BC546

BC547

BC548

BC546

BC547

BC548

BC546

BC547

BC548

BC546

BC547

BC548

V_CB= 70V, I_E=0

0.1

_CB= 50 V, I_E=0

_CB= 30V, I_E=0

μA

Collector cut-off current

Emitter cut-off current

DC current gain

V_CE= 60 V, I_B=0

I_CEO

_CE= 45 V, I_B=0

_CE= 30 V, I_B=0

0.1

μA

I_EBO

V_EB= 5V, I_C=0

110

200

420

800

220

450

800

h_FE

V_CE=5V, I_C= 2mA

BC546A/BC547A/BC548A

BC546B/BC547B/BC548B

BC546C/BC547C/BC548C

Collector-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I_C=100mA, I_B= 5mA

I_C= 100mA, I_B=5mA

0.3

1.1

Base-emitter saturation voltage

Transition frequency

V_CE= 5V, I_C= 10mA

f_T

150

MHz

f = 100MHz

A,May,2011

中文翻译

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