Datasheet > BC546_05

BC546_05

更新时间： 2024-09-13 04:08:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
6页	69K
描述
Amplifier Transistors NPN Silicon

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中文翻译

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数据手册

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BC546_05 数据手册

BC546B, BC547A, B, C,

BC548B, C

Amplifier Transistors

NPN Silicon

Features

http://onsemi.com

• Pb−Free Packages are Available*

COLLECTOR

MAXIMUM RATINGS

BASE

Rating

Symbol

Value

Unit

Collector - Emitter Voltage

CEO

CBO

EBO

Vdc

BC546

BC547

BC548

EMITTER

Collector - Base Voltage

Emitter - Base Voltage

Vdc

BC546

BC547

BC548

6.0

Vdc

TO−92

CASE 29

STYLE 17

Collector Current − Continuous

100

mAdc

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

mW/°C

MARKING DIAGRAM

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

54x

Thermal Resistance,

Junction−to−Ambient

200

°C/W

AYWWG

Thermal Resistance,

Junction−to−Case

83.3

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

BC54x = Device Code

x = 6, 7, or 8

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

September, 2005 − Rev. 5

BC546/D

12 3 4 5 6

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