5秒后页面跳转
BC337ABU PDF预览

BC337ABU

更新时间: 2024-02-12 10:25:48
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关放大器晶体管
页数 文件大小 规格书
3页 27K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

BC337ABU 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.63
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin/Lead (Sn/Pb)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BC337ABU 数据手册

 浏览型号BC337ABU的Datasheet PDF文件第2页浏览型号BC337ABU的Datasheet PDF文件第3页 
BC337/338  
Switching and Amplifier Applications  
Suitable for AF-Driver stages and low power output stages  
Complement to BC327/BC328  
TO-92  
1. Collector 2. Base 3. Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
: BC337  
: BC338  
Collector-Emitter Voltage  
CES  
50  
30  
V
V
CEO  
EBO  
: BC337  
: BC338  
45  
25  
V
V
Emitter-Base Voltage  
5
800  
V
mA  
mW  
°C  
I
Collector Current (DC)  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
P
625  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I =10mA, I =0  
CEO  
CES  
EBO  
C
B
: BC337  
: BC338  
45  
25  
V
V
BV  
BV  
Collector-Emitter Breakdown Voltage  
I =0.1mA, V =0  
C BE  
: BC337  
: BC338  
50  
30  
V
V
Emitter-Base Breakdown Voltage  
I =0.1mA, I =0  
5
V
E
C
I
Collector Cut-off Current  
: BC337  
CES  
V
V
=45V, I =0  
=25V, I =0  
B
2
2
100  
100  
nA  
nA  
CE  
CE  
B
: BC338  
h
h
DC Current Gain  
V
V
=1V, I =100mA  
100  
60  
630  
FE1  
FE2  
CE  
CE  
C
=1V, I =300mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base Emitter On Voltage  
I =500mA, I =50mA  
0.7  
1.2  
V
V
CE  
C
B
V
=1V, I =300mA  
C
BE  
CE  
CE  
CB  
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
=5V, I =10mA, f=50MHz  
100  
12  
MHz  
pF  
T
C
C
=10V, I =0, f=1MHz  
ob  
E
h
Classification  
FE  
Classification  
16  
100 ~ 250  
60-  
25  
40  
h
h
160 ~ 400  
100-  
250 ~ 630  
170-  
FE1  
FE2  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

BC337ABU 替代型号

型号 品牌 替代类型 描述 数据表
BC33716BU FAIRCHILD

类似代替

NPN Epitaxial Silicon Transistor

与BC337ABU相关器件

型号 品牌 获取价格 描述 数据表
BC337AD ZETEX

获取价格

Transistor
BC337AD26Z TI

获取价格

NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC337ADWP ZETEX

获取价格

Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH
BC337AL34Z TI

获取价格

NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC337-AMMO NXP

获取价格

TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
BC337AMO NXP

获取价格

TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 P
BC337-AP MCC

获取价格

NPN Plastic-Encapsulate Transistors
BC337-AP-HF MCC

获取价格

Small Signal Bipolar Transistor,
BC337AT/R ETC

获取价格

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 500MA I(C) | TO-92
BC337BD ZETEX

获取价格

TRANSISTOR,BJT,NPN,45V V(BR)CEO,CHIP / DIE