5秒后页面跳转
BC337-40BK PDF预览

BC337-40BK

更新时间: 2024-11-03 19:45:19
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体管
页数 文件大小 规格书
2页 89K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC337-40BK 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:1.06最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):170JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC337-40BK 数据手册

 浏览型号BC337-40BK的Datasheet PDF文件第2页 
BC337-xBK / BC338-xBK  
BC337-xBK / BC338-xBK  
General Purpose Si-Epitaxial Planar Transistors  
Si-Epitaxial Planar-Transistoren für universellen Einsatz  
NPN  
NPN  
Version 2010-05-27  
4.6±0.1  
Power dissipation  
Verlustleistung  
625 mW  
Plastic case  
TO-92  
Kunststoffgehäuse  
(10D3)  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
C
B E  
Special packaging bulk  
Sonder-Lieferform Schüttgut  
2 x 1.27  
Dimensions - Maße [mm]  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
BC337  
BC338  
30 V  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open  
VCES  
VCEO  
VEBO  
Ptot  
IC  
50 V  
45 V  
25 V  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
C open  
5 V  
625 mW 1)  
800 mA  
1 A  
Collector current – Kollektorstrom (dc)  
Peak Collector current – Kollektor-Spitzenstrom  
Base current – Basisstrom  
ICM  
IB  
100 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
VCE = 1 V, IC = 100 mA  
Group -16  
Group -25  
Group -40  
hFE  
hFE  
hFE  
100  
160  
250  
160  
250  
400  
250  
400  
630  
VCE = 1 V, IC = 300 mA  
Group -16  
Group -25  
Group -40  
hFE  
hFE  
hFE  
60  
100  
170  
130  
200  
320  
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)  
IC = 500 mA, IB = 50 mA  
VCEsat  
0.7 V  
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case  
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

BC337-40BK 替代型号

型号 品牌 替代类型 描述 数据表
BC33725TA ONSEMI

类似代替

NPN Bipolar Transistor
BC33725BU ONSEMI

类似代替

NPN Bipolar Transistor
BC337-40 DIOTEC

类似代替

Si-Epitaxial PlanarTransistors

与BC337-40BK相关器件

型号 品牌 获取价格 描述 数据表
BC337-40-BP MCC

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC33740BU ROCHESTER

获取价格

800mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, TO-92, 3 PIN
BC33740BU FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
BC33740BU ONSEMI

获取价格

NPN Bipolar Transistor
BC33740D26Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC337-40D26Z FAIRCHILD

获取价格

800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC33740D27Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC337-40D27Z FAIRCHILD

获取价格

800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC33740D74Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC337-40D74Z FAIRCHILD

获取价格

800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92