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BC337-40 PDF预览

BC337-40

更新时间: 2024-11-02 22:39:27
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 87K
描述
Si-Epitaxial PlanarTransistors

BC337-40 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:1.05最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):170JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC337-40 数据手册

 浏览型号BC337-40的Datasheet PDF文件第2页 
BC 337 / BC 338  
NPN  
General Purpose Transistors  
NPN  
Si-Epitaxial PlanarTransistors  
Power dissipation – Verlustleistung  
625 mW  
Plastic case  
TO-92  
(10D3)  
Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging taped in ammo pack  
Standard Pinning  
Standard Lieferform gegurtet in Ammo-Pack  
1 = C 2 = B 3 = E  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 337  
45 V  
50 V  
BC 338  
25 V  
30 V  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
Junction temp. – Sperrschichttemperatur  
B open  
E open  
C open  
VCE0  
VCB0  
VEB0  
Ptot  
IC  
5 V  
625 mW 1)  
800 mA  
150C  
Tj  
Storage temperature – Lagerungstemperatur  
TS  
- 55…+ 150C  
Characteristics (Tj = 25C)  
Kennwerte (Tj = 25C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis  
Group -16  
Group -25  
Group -40  
hFE  
hFE  
hFE  
100  
160  
250  
160  
250  
400  
250  
400  
630  
VCE = 1 V, IC = 100 mA  
Collector-Emitter cutoff current – Kollektorreststrom  
VCE = 40 V  
VCE = 20 V  
VCE = 40 V, Tj = 125C  
VCE = 20 V, Tj = 125C  
BC 337  
BC 338  
BC 337  
BC 338  
ICES  
ICES  
ICES  
ICES  
200 nA  
200 nA  
10 A  
10 A  
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case  
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
4
01.11.2003  

BC337-40 替代型号

型号 品牌 替代类型 描述 数据表
BC337-25 DIOTEC

完全替代

Si-Epitaxial PlanarTransistors
BC337-40BK DIOTEC

类似代替

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC557B DIOTEC

类似代替

Si-Epitaxial PlanarTransistors

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