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BC327TAR PDF预览

BC327TAR

更新时间: 2024-11-21 20:56:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
4页 47K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

BC327TAR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.02
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC327TAR 数据手册

 浏览型号BC327TAR的Datasheet PDF文件第2页浏览型号BC327TAR的Datasheet PDF文件第3页浏览型号BC327TAR的Datasheet PDF文件第4页 
BC327/328  
Switching and Amplifier Applications  
Suitable for AF-Driver stages and low power output stages  
Complement to BC337/BC338  
TO-92  
1. Collector 2. Base 3. Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
: BC327  
: BC328  
Collector-Emitter Voltage  
CES  
-50  
-30  
V
V
CEO  
EBO  
: BC327  
: BC328  
-45  
-25  
V
V
Emitter-Base Voltage  
-5  
-800  
V
I
Collector Current (DC)  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
mA  
mW  
°C  
C
P
625  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage I = -10mA, I =0  
CEO  
CES  
EBO  
C
B
: BC327  
: BC328  
-45  
-25  
V
V
Collector-Emitter Breakdown Voltage I = -0.1mA, V =0  
C
BE  
: BC327  
: BC328  
-50  
-30  
V
V
Emitter-Base Breakdown Voltage  
I = -10µA, I =0  
-5  
V
E
C
I
Collector Cut-off Current  
: BC327  
CES  
V
V
= -45V, V =0  
= -25V, V =0  
BE  
-2  
-2  
-100  
-100  
nA  
nA  
CE  
CE  
BE  
: BC328  
h
h
DC Current Gain  
V
V
= -1V, I = -100mA  
100  
40  
630  
FE1  
FE2  
CE  
CE  
C
= -1V, I = -300mA  
C
V
V
(sat) Collector-Emitter Saturation Voltage  
(on) Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -500mA, I = -50mA  
-0.7  
-1.2  
V
V
CE  
C
B
V
= -1V, I = -300mA  
C
BE  
CE  
CE  
CB  
f
V
V
= -5V, I = -10mA, f=20MHz  
100  
12  
MHz  
pF  
T
C
C
= -10V, I =0, f=1MHz  
ob  
E
h
Classification  
FE  
Classification  
16  
100 ~ 250  
60-  
25  
40  
h
h
160 ~ 400  
100-  
250 ~ 630  
170-  
FE1  
FE2  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, August 2002  

BC327TAR 替代型号

型号 品牌 替代类型 描述 数据表
BC32716TA FAIRCHILD

完全替代

PNP Epitaxial Silicon Transistor, 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM, 2000/A

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