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BC327/D PDF预览

BC327/D

更新时间: 2024-11-24 23:34:39
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4页 80K
描述
Amplifier Transistor PNP

BC327/D 数据手册

 浏览型号BC327/D的Datasheet PDF文件第2页浏览型号BC327/D的Datasheet PDF文件第3页浏览型号BC327/D的Datasheet PDF文件第4页 
ON Semiconductort  
Amplifier Transistors  
PNP Silicon  
BC327,-16,-25  
BC328,-16,-25  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
BC327  
–45  
BC328  
–25  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
–50  
–30  
Vdc  
–5.0  
Vdc  
Collector Current — Continuous  
I
C
–800  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
1
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
COLLECTOR  
1
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
R
83.3  
q
2
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = –10 mA, I = 0)  
V
Vdc  
(BR)CEO  
BC327  
BC328  
–45  
–25  
C
B
Collector–Emitter Breakdown Voltage  
(I = –100 µA, I = 0)  
V
Vdc  
(BR)CES  
BC327  
BC328  
–50  
–30  
C
E
Emitter–Base Breakdown Voltage  
(I = –10 mA, I = 0)  
V
–5.0  
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = –30 V, I = 0)  
I
nAdc  
CBO  
BC327  
BC328  
–100  
–100  
CB  
E
(V = –20 V, I = 0)  
CB  
E
Collector Cutoff Current  
(V = –45 V, V = 0)  
I
nAdc  
nAdc  
CES  
BC327  
BC328  
–100  
–100  
CE  
BE  
(V = –25 V, V = 0)  
CE  
BE  
Emitter Cutoff Current  
(V = –4.0 V, I = 0)  
I
–100  
EBO  
EB  
C
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
February, 2001 – Rev. 1  
BC327/D  

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