Datasheet > BC327_08

BC327_08

更新时间： 2024-02-01 15:41:33

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描述
EPITAXIAL PLANAR PNP TRANSISTOR

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数据手册

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BC327_08 数据手册

SEMICONDUCTOR

BC327

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

High Current : I_C=-800mA.

DC Current Gain : h_FE=100 630 (V_CE=-1V, I_c=-100mA).

For Complementary with NPN type BC337.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-50

UNIT

-45

-5

-800

-200

800

I_B

Base Current

I_E

Emitter Current

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

625

T_j

150

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

h_FE

TEST CONDITION

MIN.

TYP.

MAX.

-100

630

-0.7

-1.2

UNIT

V_CB=-45V, I_E=0

V_CE=-1V, I_C=-100mA

I_C=-500mA, I_B=-50mA

V_CE=-1V, I_C=-300mA

V_CE=-5V, I_C=-10mA, f=100MHz

V_CB=-10V, f=1MHz, I_E=0

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

100

V_CE(sat)

V_BE(ON)

f_T

Transition Frequency

100

MHz

C_ob

Collector Output Capacitance

Note : h_FEClassification none:100 630, 16:100 250, 25:160 400, 40:250 630

2008. 4. 24

Revision No : 3

1/2

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