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BC307BRL1G PDF预览

BC307BRL1G

更新时间: 2024-11-26 03:21:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
4页 55K
描述
Amplifier Transistors PNP Silicon

BC307BRL1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:LEAD FREE, CASE 29-11, TO-92, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:1 week风险等级:5.31
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-226
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):280 MHzBase Number Matches:1

BC307BRL1G 数据手册

 浏览型号BC307BRL1G的Datasheet PDF文件第2页浏览型号BC307BRL1G的Datasheet PDF文件第3页浏览型号BC307BRL1G的Datasheet PDF文件第4页 
BC307B  
Amplifier Transistors  
PNP Silicon  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
COLLECTOR  
1
MAXIMUM RATINGS  
2
Rating  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Symbol  
Value  
−45  
Unit  
Vdc  
BASE  
V
CEO  
V
CBO  
V
EBO  
−50  
Vdc  
3
EMITTER  
−5.0  
−100  
Vdc  
Collector Current − Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
D
1.0  
8.0  
W
mW/°C  
C
Derate above 25°C  
TO−92  
CASE 29  
STYLE 17  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
1
2
3
THERMAL CHARACTERISTICS  
Characteristic  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
MARKING DIAGRAM  
q
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BC30  
7BRL1  
AYWW G  
G
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
2000 / Tape & Reel  
BC307BRL1G  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 4  
BC307/D  

BC307BRL1G 替代型号

型号 品牌 替代类型 描述 数据表
BC307B ONSEMI

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Amplifier Transistors(PNP Silicon)

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