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BC307C

更新时间: 2024-01-12 10:55:18
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
4页 88K
描述
Amplifier Transistors(PNP Silicon)

BC307C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:7.41最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):420JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):280 MHzBase Number Matches:1

BC307C 数据手册

 浏览型号BC307C的Datasheet PDF文件第2页浏览型号BC307C的Datasheet PDF文件第3页浏览型号BC307C的Datasheet PDF文件第4页 
Order this document  
by BC307/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
2
3
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol BC307, B, C  
BC308C  
–25  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
–45  
–50  
–30  
Vdc  
–5.0  
Vdc  
Collector Current — Continuous  
I
C
–100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = –2.0 mAdc, I = 0)  
BC307,B,C  
BC308C  
V
V
–45  
–25  
Vdc  
Vdc  
(BR)CEO  
C
B
EmitterBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
BC307,B,C  
BC308C  
–5.0  
–5.0  
(BR)EBO  
E
C
Collector–Emitter Leakage Current  
I
CES  
(V  
CES  
(V  
CES  
(V  
CES  
(V  
CES  
= –50 V, V  
= –30 V, V  
= –50 V, V  
= –30 V, V  
= 0)  
= 0)  
BC307,B,C  
BC308C  
BC307,B,C  
BC308C  
–0.2  
–0.2  
–0.2  
–0.2  
–15  
–15  
–4.0  
–4.0  
nAdc  
BE  
BE  
BE  
BE  
= 0) T = 125°C  
= 0) T = 125°C  
µA  
A
A
REV 1  
Motorola, Inc. 1997  

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