Datasheet > BC307B_11

BC307B_11

更新时间： 2024-02-11 03:35:22

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
4页	83K
描述
Amplifier Transistors

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中文翻译

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数据手册

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BC307B_11 数据手册

BC307B

Amplifier Transistors

PNP Silicon

Features

• This is a Pb−Free Device*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Symbol

Value

−45

Unit

Vdc

BASE

CEO

CBO

EBO

−50

Vdc

EMITTER

−5.0

−100

Vdc

Collector Current − Continuous

mAdc

Total Device Dissipation @ T = 25°C

350

2.8

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

1.0

8.0

mW/°C

Derate above 25°C

TO−92

CASE 29

STYLE 17

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

BENT LEAD

TAPE & REEL

AMMO PACK

Symbol

Max

357

125

Unit

°C/W

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

BC30

AYWW G

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

2000 / Tape & Reel

BC307BRL1G

TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

May, 2011 − Rev. 5

BC307/D

12 3 4

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