Datasheet > BC183

BC183

更新时间： 2024-09-18 08:49:19

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	140K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

获取价格

数据手册

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BC183 数据手册

BC182…BC184

NPN Silicon Epitaxial Planar Transistor

for general purpose amplifier applications

1. Collector 2. Base 3. Emitter

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_CBO

Value

Unit

Collector Base Voltage

BC182

BC183, BC184

Collector Emitter Voltage

BC182

BC183, BC184

V_CEO

V_EBO

Emitter Base Voltage

Collector Current

I_C

100

350

P_tot

Total Power Dissipation

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at V_CE= 5 V, I_C= 10 µA

BC182, BC183

BC184

BC182

BC183

BC184

h_FE

100

120

250

at V_CE= 5 V, I_C= 2 mA

500

800

at V_CE= 5 V, I_C= 100 mA

BC182, BC183

BC184

130

Collector Base Cutoff Current

at V_CB= 50 V

at V_CB= 30 V

BC182

BC183, BC184

I_CBO

Emitter Base Cutoff Current

at V_EB= 4 V

I_EBO

Collector Base Breakdown Voltage

at I_C= 10 µA

BC182

BC183, BC184

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Collector Emitter Breakdown Voltage

at I_C= 2 mA

BC182

BC183, BC184

Emitter Base Breakdown Voltage

at I_E= 100 µA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 27/12/2007

中文翻译

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