Datasheet > BAW79DH6327XTSA1

BAW79DH6327XTSA1

更新时间： 2024-01-29 21:30:48

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	67K
描述
Rectifier Diode, 2 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

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BAW79DH6327XTSA1 数据手册

BAW78.../BAW79...

Silicon Switching Diodes

• Switching applications

• High breakdown voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BAW78D

BAW79D

Type

Package

Configuration

Marking

BAW78D

BAW79D

SOT89

single

common cathode

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

400

Unit

Diode reverse voltage

Peak reverse voltage

Forward current

Peak forward current

Surge forward current, t = 1 µs

Non-repetitive peak surge forward current

Total power dissipation

FSM

tot

BAW78D, T ≤ 125°C

BAW79D, T ≤ 115°C

150

°C

Junction temperature

Storage temperature

-65 ... 150

stg

¹Pb-containing package may be available upon special request

2007-04-20

12 3 4 5 6

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