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BAW78DH6327XTSA1 PDF预览

BAW78DH6327XTSA1

更新时间: 2024-09-28 04:08:03
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
6页 67K
描述
Rectifier Diode, 1 Element, 1A, Silicon, ROHS COMPLIANT, SOT-89, 3 PIN

BAW78DH6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-F3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:1 W
最大反向恢复时间:1 µs表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAW78DH6327XTSA1 数据手册

 浏览型号BAW78DH6327XTSA1的Datasheet PDF文件第2页浏览型号BAW78DH6327XTSA1的Datasheet PDF文件第3页浏览型号BAW78DH6327XTSA1的Datasheet PDF文件第4页浏览型号BAW78DH6327XTSA1的Datasheet PDF文件第5页浏览型号BAW78DH6327XTSA1的Datasheet PDF文件第6页 
BAW78.../BAW79...  
Silicon Switching Diodes  
Switching applications  
High breakdown voltage  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BAW78D  
BAW79D  
2
2
1
2
3
1
2
3
Type  
Package  
Configuration  
Marking  
BAW78D  
BAW79D  
SOT89  
SOT89  
single  
GD  
GH  
common cathode  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
400  
400  
1
Unit  
V
Diode reverse voltage  
Peak reverse voltage  
Forward current  
V
V
R
RM  
A
I
I
I
I
I
F
1
Peak forward current  
FM  
FM  
FS  
Peak forward current  
1
10  
-
Surge forward current, t = 1 µs  
Non-repetitive peak surge forward current  
Total power dissipation  
FSM  
W
P
tot  
BAW78D, T 125°C  
1
1
S
BAW79D, T 115°C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
T
j
-65 ... 150  
stg  
1Pb-containing package may be available upon special request  
2007-04-20  
1

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