Datasheet > BAV99SQ62702A1277

BAV99SQ62702A1277

更新时间： 2024-02-12 23:59:37

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
4页	45K
描述
DIODE QUAD SOT363

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数据手册

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BAV99SQ62702A1277 数据手册

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BAV 99S

Silicon Switching Diode Array

• For high-speed switching applications

• Connected in series

• Internal (galvanic) isolated Diodes

in one package

VPS05604

Type

Marking Ordering Code

A7s Q62702-A1277

Pin Configuration

Package

BAV 99S

1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363

Maximum Ratings

Parameter

Symbol

Value

Unit

Diode reverse voltage

Peak reverse voltage

Forward current

200

Surge forward current, t = 1 µs

4.5

Total power dissipation, T = 85 °C

250

°C

tot

Junction temperature

Storage temperature

150

65 ...+150

stg

Thermal Resistance

Junction - ambient

≤ 530

≤ 260

K/W

thJA

thJS

Junction - soldering point

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm Cu

Semiconductor Group

Apr-27-1998

1998-11-01

Semiconductor Group

12 3 4

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