Datasheet > BAV99T

BAV99T

更新时间： 2024-09-25 12:53:47

品牌	Logo	应用领域
TYSEMI		二极管光电二极管
页数	文件大小	规格书
1页	63K
描述
Power dissipation (Ta mb=25 ) PD 150 mW Forward Current IF 75 mA

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BAV99T 数据手册

Product specification

BAS16T;BAW56T

BAV70T;BAV99T

SOT-523

+0.1

1.6

-0.1

Unit: mm

+0.1

1.0

-0.1

+0.05

0.2

-0.05

+0.01

0.1

-0.01

Features

+0.25

0.3

-0.05

+0.1

0.5

-0.1

1. Base

2. Emitter

3. Collecter

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

P^D

Limits

150

Unit

Power dissipation

Forward Current

Reverse Voltage

(T^{a mb}=25

)

I^F

V^R

Operating and storage junction temperature range

T^J, T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)

Conditions

I^R= 100

Min

Max

Unit

Reverse breakdown voltage

V^R=75 V

V^R=25 V

I^F=1 mA

Reverse voltage leakage current

0.03

715

855

1000

1250

1.5

I^F=10 mA

IF = 50 mA

Forward voltage

V^F

I^F=150 mA

Diode capacitance

C^D

t^rr

V^R=0 V,f=1MHz

Reverse recovery time

Marking

Type

BAS16T

BAW56T

BAV70T

BAV99T

Marking

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4008-318-123

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