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BAV99T

更新时间: 2024-02-25 16:10:51
品牌 Logo 应用领域
科信 - KEXIN 二极管开关光电二极管
页数 文件大小 规格书
1页 35K
描述
Switching Diode

BAV99T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.58其他特性:HIGH SPEED SWITCH
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:2
端子数量:3最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.33 W认证状态:Not Qualified
最大重复峰值反向电压:85 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

BAV99T 数据手册

  
SMD Type  
Diodes  
Switching Diode  
BAS16T;BAW56T  
BAV70T;BAV99T  
SOT-523  
+0.1  
1.6  
-0.1  
Unit: mm  
+0.1  
1.0  
-0.1  
+0.05  
0.2  
-0.05  
+0.01  
0.1  
-0.01  
Features  
2
1
3
+0.25  
0.3  
-0.05  
+0.1  
0.5  
-0.1  
1. Base  
2. Emitter  
3. Collecter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
PD  
Limits  
150  
Unit  
mW  
mA  
V
Power dissipation  
Forward Current  
Reverse Voltage  
(Ta mb=25  
)
IF  
75  
VR  
85  
Operating and storage junction temperature range  
TJ, Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
V(BR)  
Conditions  
IR = 100  
Min  
85  
Max  
Unit  
V
Reverse breakdown voltage  
A
VR =75 V  
VR =25 V  
IF =1 mA  
2
Reverse voltage leakage current  
IR  
A
0.03  
715  
855  
1000  
1250  
1.5  
IF =10 mA  
IF = 50 mA  
Forward voltage  
VF  
mV  
IF =150 mA  
Diode capacitance  
CD  
trr  
VR=0 V,f=1MHz  
pF  
ns  
Reverse recovery time  
4
Marking  
Type  
BAS16T  
A2  
BAW56T  
JD  
BAV70T  
JJ  
BAV99T  
JE  
Marking  
1
www.kexin.com.cn  

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