Datasheet > BAV99SRFG

BAV99SRFG

更新时间： 2024-02-16 00:38:07

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	221K
描述
250mW High Speed Switching Array

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中文翻译

获取价格

数据手册

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BAV99SRFG 数据手册

BAV99S

Taiwan Semiconductor

Small Signal Product

250mW High Speed Switching Array

FEATURES

- Fast switching speed

- High reverse breakdown voltage rating

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with Nickel (Ni) underplate

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

SOT-363

MECHANICAL DATA

- Case: SOT-363 small outline plastic package

- Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed : 260°C/10s

- Case material UL flammability rating 94V-0

- Weight: 8 ± 0.5 mg

- Marking Code: K1

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

PARAMETER

VALUE

SYMBOL

UNIT

Power Dissipation

P_D

V_RRM

I_FRM

I_O

200

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Mean Forward Current

450

150

Pulse width = 1 μs

4.5

Non-Repetitive Peak Forward

Surge Current

I_FSM

Pulse width = 1 s

0.5

^oC

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R=2.5μA

I_F=1.0mA

V_(BR)

Reverse Breakdown Voltage

0.715

0.855

1.000

1.200

1.250

1.000

1.500

6.000

I_F=10mA

I_F=50mA

V_F

Forward Voltage

I_F=100mA

I_F=150mA

@V_R=75V

V_R=0, f=1.0MHz

(Note 1)

Reverse Leakage Current

Junction Capacitance

I_R

C_J

t_rr

μA

Reverse Recovery Time

Note 1 : Reverse recovery test conditions : I_F=I_R=10mA, R_L=100Ω

Document Number: DS_S1501006

Version: G15

12 3 4

中文翻译

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