Datasheet > BAV99S.115

BAV99S.115

更新时间： 2022-05-21 17:06:38

品牌	Logo	应用领域
恩智浦 - NXP		二极管开关
页数	文件大小	规格书
14页	372K
描述
High-speed switching diodes

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BAV99S.115 数据手册

BAV99 series

NXP Semiconductors

High-speed switching diodes

8. Test information

D.U.T.

10 %

+ I

= 50 Ω

SAMPLING

OSCILLOSCOPE

= 50 Ω

V = V + I × R

(1)

90 %

mga881

input signal

output signal

(1) I_R= 1 mA

Input signal: reverse pulse rise time t_r= 0.6 ns; reverse voltage pulse duration t_p= 100 ns; duty cycle δ = 0.05

Oscilloscope: rise time t_r= 0.35 ns

Fig 5. Reverse recovery time test circuit and waveforms

1 kΩ

450 Ω

90 %

= 50 Ω

OSCILLOSCOPE

= 50 Ω

D.U.T.

10 %

input signal

output signal

mga882

Input signal: forward pulse rise time t_r= 20 ns; forward current pulse duration t_p≥ 100 ns; duty cycle δ ≤ 0.005

Fig 6. Forward recovery voltage test circuit and waveforms

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

BAV99_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 8 — 18 November 2010

6 of 14

1...3 4 567 8 9...14

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