Datasheet > BAV99S.115

BAV99S.115

更新时间： 2022-05-21 17:06:38

品牌	Logo	应用领域
恩智浦 - NXP		二极管开关
页数	文件大小	规格书
14页	372K
描述
High-speed switching diodes

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BAV99S.115 数据手册

BAV99 series

NXP Semiconductors

High-speed switching diodes

6. Thermal characteristics

Table 7.

Symbol

R_th(j-a)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max Unit

[1][2]

thermal resistance from

junction to ambient

in free air

BAV99

500

625

K/W

BAV99W

R_th(j-sp)

thermal resistance from

junction to solder point

BAV99

360

260

300

K/W

[3]

BAV99S

BAV99W

[1] Single diode loaded.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Soldering points at pins 2, 3, 5 and 6.

7. Characteristics

Table 8.

Characteristics

T_amb= 25 °C unless otherwise specified.

Symbol Parameter

Per diode

Conditions

Min

Typ

Max Unit

V_F

forward voltage

I_F= 1 mA

715

855

I_F= 10 mA

I_F= 50 mA

I_F= 150 mA

1.25

I_R

reverse current

V_R= 25 V

μA

V_R= 80 V

0.5

V_R= 25 V; T_j= 150 °C

V_R= 80 V; T_j= 150 °C

f = 1 MHz; V_R= 0 V

C_d

t_rr

diode capacitance

1.5

[1]

[2]

reverse recovery time

forward recovery voltage

V_FR

1.75

[1] When switched from I_F= 10 mA to I_R= 10 mA; R_L= 100 Ω; measured at I_R= 1 mA.

[2] When switched from I_F= 10 mA; t_r= 20 ns.

BAV99_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 8 — 18 November 2010

4 of 14

1 2 345 6 7...14

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