Datasheet > BAV99S.115

BAV99S.115

更新时间： 2022-05-21 17:06:38

品牌	Logo	应用领域
恩智浦 - NXP		二极管开关
页数	文件大小	规格书
14页	372K
描述
High-speed switching diodes

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BAV99S.115 数据手册

BAV99 series

NXP Semiconductors

High-speed switching diodes

5. Limiting values

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Per diode

V_RRM

Parameter

Conditions

Min

Max

Unit

repetitive peak reverse

voltage

100

V_R

I_F

reverse voltage

forward current

BAV99

[1]

[2]

[1]

[2]

215

125

200

150

130

500

BAV99S

BAV99W

I_FRM

I_FSM

repetitive peak forward

current

[3]

non-repetitive peak

forward current

square wave

t_p= 1 μs

t_p= 1 ms

t_p= 1 s

0.5

[1][4]

[5]

P_tot

total power dissipation

BAV99

T_amb≤ 25 °C

T_sp≤ 85 °C

T_amb≤ 25 °C

250

200

BAV99S

BAV99W

Per device

T_j

junction temperature

ambient temperature

storage temperature

150

°C

T_amb

T_stg

−65

+150

[1] Single diode loaded.

[2] Double diode loaded.

[3] T_j= 25 °C prior to surge.

[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[5] Soldering points at pins 2, 3, 5 and 6.

BAV99_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 8 — 18 November 2010

3 of 14

1 234 5 6 7...14

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