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BAV99DW-T PDF预览

BAV99DW-T

更新时间: 2024-11-20 13:05:51
品牌 Logo 应用领域
美微科 - MCC 整流二极管开关光电二极管PC
页数 文件大小 规格书
3页 189K
描述
Rectifier Diode,

BAV99DW-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.51JESD-609代码:e0
湿度敏感等级:1端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BAV99DW-T 数据手册

 浏览型号BAV99DW-T的Datasheet PDF文件第2页浏览型号BAV99DW-T的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
BAV99  
Features  
·
Low Current Leakage  
Low Cost  
350mW 70Volt  
Dual Series  
Switching Diode  
Small Outline Surface Mount Package  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
x
Marking:A7/JG  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
SOT-23  
A
D
C/A  
Maximum Ratings  
B
C
Operating Temperature: -55°C to +150°C  
A
C
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 357K/W Junction To Ambient  
F
E
Electrical Characteristics @ 25°C Unless Otherwise Specified  
H
G
J
VR  
IO  
Reverse Voltage  
Average Rectified  
Output Current  
Power Dissipation  
Peak Forward Surge  
Current  
70V  
K
DIMENSIONS  
MM  
200mA  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
PTOT  
IFSM  
350mW  
1.0A  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
t=1s,Non-Repetitive  
t=1us,Non-Repetitive  
IFM = 1mA;  
2.0A  
715mV  
855mV  
1000mV  
1250mV  
F
G
H
J
.100  
1.12  
.180  
.51  
VF *  
IFM = 10mA;  
IFM = 50mA;  
IFM = 150mA;  
Maximum Instantaneous  
Forward Voltage  
.085  
.37  
K
Suggested Solder  
Pad Layout  
VR=75Volts  
TJ = 25°C  
2.5uA  
50uA  
30uA  
2.0pF  
6nS  
Maximum DC Reverse  
Current At Rated DC  
Blocking Voltage  
.031  
.800  
VR=75Volts  
TJ = 150°C  
VR=25Volts  
TJ = 150°C  
Measured at  
1.0MHz, VR=0V  
IR  
.035  
.900  
.079  
2.000  
inches  
mm  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
CJ  
Trr  
IF=10mA  
, Irr=1mA  
.037  
.950  
RL=100K  
.037  
.950  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

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