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BAV99DW-TP PDF预览

BAV99DW-TP

更新时间: 2024-09-25 12:51:35
品牌 Logo 应用领域
美微科 - MCC 整流二极管光电二极管
页数 文件大小 规格书
3页 226K
描述
200mW 75Volt Plastic-Encapsulate Diode

BAV99DW-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:1.05配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:4
端子数量:6最大输出电流:0.15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAV99DW-TP 数据手册

 浏览型号BAV99DW-TP的Datasheet PDF文件第2页浏览型号BAV99DW-TP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
BAV99DW  
Features  
Halogen free available upon request by adding suffix "-HF"  
200mW 75Volt  
Plastic-Encapsulate  
Diode  
·
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
·
·
Moisture Sensitivity Level 1  
Small Outline Surface Mount Package  
Low Current Leakage  
MAKING:KJG  
Low Cost  
SOT-363  
G
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
C
B
A
H
M
Electrical Characteristics @ 25°C Unless Otherwise Specified  
K
J
Reverse Voltage  
Average Rectified  
Output Current  
VR  
IO  
75V  
D
L
150mA  
Power Dissipation  
PTOT  
200mW  
715mV  
DIMENSIONS  
I
FM = 1mA;  
Maximum  
INCHES  
MM  
Instantaneous  
Forward Voltage  
VF  
855mV IFM = 10mA;  
1000mV IFM = 50mA;  
1250mV IFM = 150mA;  
DIM  
A
MIN  
.006  
.045  
.085  
MAX  
.014  
.053  
.096  
MIN  
0.15  
1.15  
2.15  
MAX  
0.35  
1.35  
2.45  
NOTE  
B
C
D
G
H
J
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
.026  
0.65Nominal  
.047  
.071  
---  
.055  
.087  
.004  
.043  
.018  
.006  
1.20  
1.80  
---  
1.40  
2.20  
0.10  
1.10  
0.46  
0.15  
IR  
2.5uA  
VR=75V  
0.025uA VR=20V  
K
.035  
.010  
.003  
0.90  
0.26  
0.08  
L
M
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
CJ  
Trr  
2.0pF  
4nS  
Measured at  
1.0MHz, VR=0V  
IF=IR=10mA  
Irr = 0.1*IR  
Rc=100Ω  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 3  

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