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BAV99C_15

更新时间: 2024-11-12 01:22:47
品牌 Logo 应用领域
KEC 局域网
页数 文件大小 规格书
2页 353K
描述
SILICON EPITAXIAL PLANAR DIODE

BAV99C_15 数据手册

 浏览型号BAV99C_15的Datasheet PDF文件第2页 
SEMICONDUCTOR  
BAV99C  
SILICON EPITAXIAL PLANAR DIODE  
TECHNICAL DATA  
ULTRA HIGH SPEED SWITCHING APPLICATION.  
E
FEATURES  
L
B
L
· Small Package : SOT-23(1).  
DIM MILLIMETERS  
_
+
A
B
C
D
E
2.90 0.1  
2
3
1.30+0.20/-0.15  
1.30 MAX  
0.40+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
1
G
J
0.10  
K
L
0.00 ~ 0.10  
0.55  
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
M
N
0.20 MIN  
1.00+0.20/-0.10  
SYMBOL  
RATING  
80  
UNIT  
V
M
VR  
IF  
Reverse Voltage  
3
Continuous Forward Current  
Surge Current (10ms)  
100  
mA  
A
1. CATHODE  
1
2. ANODE  
2
IFSM  
PD  
1
3. ANODE 1 / CATHODE  
2
2
1
Power Dissipation  
225*  
150  
mW  
Tj  
Junction Temperature  
Tstg  
Storage Temperature Range  
-55150  
SOT-23(1)  
* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)  
Marking  
Lot No.  
Type Name  
H8C  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Reverse Voltage  
SYMBOL  
VR  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
-
UNIT  
V
IR=100uA  
80  
-
-
VF(1)  
VF(2)  
VF(3)  
IR  
IF=1mA  
0.61  
0.65  
0.8  
1.25  
0.5  
4
IF=10mA  
Forward Voltage  
-
0.74  
V
IF=150mA  
VR=80V  
-
-
-
-
Reverse Current  
-
μA  
CT  
VR=0, f=1MHz  
Total Capacitance  
-
pF  
2015. 5. 12  
Revision No : 0  
1/2  

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