Datasheet > BAV99-D0RF

BAV99-D0RF

更新时间： 2024-09-24 01:06:55

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	125K
描述
225mW SMD Switching Diode

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中文翻译

获取价格

数据手册

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BAV99-D0RF 数据手册

BAW56, BAV70, BAV99

Taiwan Semiconductor

Small Signal Product

225mW SMD Switching Diode

FEATURES

- Fast switching speed

- Surface mount device type

- Moisture sensitivity level 1

- Matte Tin(Sn) lead finish with Nickel(Ni) underplate

- Pb free and RoHS compliant

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

MECHANICAL DATA

- Case: SOT-23 small outline plastic package

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

SOT-23

- High temperature soldering guaranteed: 260^oC/10s

- Weight: 0.008grams (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

UNIT

Power dissipation

P_D

V_RRM

I_FRM

I_O

225

Peak repetitive reverse voltage

Repetitive peak forward current

Mean forward current

450

200

Pulse Width=1 sec

0.5

Non-repetitive peak forward

surge current

I_FSM

Pulse Width=1 µsec

^oC/W

^oC

Thermal resistance form junction to ambient

Junction and storage temperature range

R_θJA

556

T_J, T_STG

- 55 to + 150

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R= 100 µA

I_F= 50 mA

Reverse breakdown voltage

V_(BR)

1.00

1.25

2.50

V_F

I_R

Forward voltage

I_F= 150 mA

V_R= 70 V

Reverse leakage current

µA

BAW56, BAV70

V_R= 0 V,

f = 1 MHz

C_J

Junction capacitance

Reverse revovery time

BAV99

1.5

I_F= I_R= 10 mA, R_L= 100 Ω, I_RR= 1 mA

t_rr

Version: H14

Document Number: DS_S1404011

12 3 4

中文翻译

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