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BAV70TE6327 PDF预览

BAV70TE6327

更新时间: 2024-01-22 02:10:15
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
12页 148K
描述
Rectifier Diode, 85V V(RRM),

BAV70TE6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 V湿度敏感等级:1
最大非重复峰值正向电流:4.5 A最高工作温度:150 °C
最大重复峰值反向电压:85 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

BAV70TE6327 数据手册

 浏览型号BAV70TE6327的Datasheet PDF文件第1页浏览型号BAV70TE6327的Datasheet PDF文件第2页浏览型号BAV70TE6327的Datasheet PDF文件第4页浏览型号BAV70TE6327的Datasheet PDF文件第5页浏览型号BAV70TE6327的Datasheet PDF文件第6页浏览型号BAV70TE6327的Datasheet PDF文件第7页 
BAV70...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
85  
-
-
V
Breakdown voltage  
V
(BR)  
I
= 100 µA  
(BR)  
Reverse current  
V = 70 V  
I
µA  
R
-
-
-
-
-
-
0.15  
30  
R
V = 25 V, T = 150 °C  
R
A
V = 70 V, T = 150 °C  
50  
R
A
mV  
Forward voltage  
I = 1 mA  
V
F
-
-
-
-
-
-
-
-
-
-
715  
855  
F
I = 10 mA  
F
I = 50 mA  
1000  
1200  
1250  
F
I = 100 mA  
F
I = 150 mA  
F
AC Characteristics  
-
-
-
-
1.5 pF  
Diode capacitance  
C
T
V = 0 V, f = 1 MHz  
R
Reverse recovery time  
t
4
ns  
rr  
I = 10 mA, I = 10 mA, measured at I = 1mA ,  
F
R
R
R = 100  
L
Test circuit for reverse recovery time  
D.U.T.  
Pulse generator: t = 100ns, D = 0.05, t = 0.6ns,  
p
r
R = 50Ω  
i
Oscillograph  
ΙF  
Oscillograph: R = 50Ω, t = 0.35ns, C = 0.05pF  
r
EHN00019  
2007-09-19  
3

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