Datasheet > BAV21WS

BAV21WS

更新时间： 2024-11-18 12:29:43

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		二极管开关高压
页数	文件大小	规格书
2页	362K
描述
High Voltage Switching Diode

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中文翻译

获取价格

数据手册

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BAV21WS 数据手册

BAS21M3

星合子

XINGHE ELECTRONICS

High Voltage Switching Diode / DATA SHEET

◇ General purpose diodes

◇ High Voltage / Fast switching devices

◇ SOD323F Thin SMD package (Fig-1)

◇ RoHS compliant / Green EMC

◇ Matte Tin (Sn) Lead finish

◇ Moisture Level Sensitivity 1

◇ Cathode Band / Device marking

Device Marking Code

BAS21M3

0.65mm Typ

Fig.-1 Package. height

Absolute Maximum Ratings （Ta = 25 ℃）

Symbol

V_RSM

V_RRM

I_FRM

I_FSM

Parameter

Value

300

Units

Non-Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Non-Repetitive Peak Forward Current ^*1

Continuous Forward Current

Power Dissipation

250

625

I_O

200

℃

P_D

250

T_J

Junction Temperature

150

T_STG

Storage Temperature

-55 to +150

℃

^*1Pulse width = 1μs

Electrical Characteristics （Ta = 25 ℃）

Symbol

BV_R

Parameter

Conditions

I_R= 100μA

Min

250

Max

Units

Breakdown Voltage

I_R

Reverse Current

Forward Voltage

150

100

V_R= 250V

μA

V_R= 200V (Ta = 150℃)

I_F= 100mA

V_F

1.0

1.25

I_F= 200mA

Capacitance

V_R= 0V, f = 1MHz

I_F= I_R= 30mA,

T_RR

Reverse Recovery Time

I_RR= 3mA, R_L= 100Ω

GAOMI XINGHE ELECTRONICSCO.,LTD.

WWW.SDDZG.COM

TEL:0536-2210359

QQ:464768017

中文翻译

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