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BAV21WS-V-G PDF预览

BAV21WS-V-G

更新时间: 2024-01-19 08:41:29
品牌 Logo 应用领域
威世 - VISHAY 小信号开关二极管高压
页数 文件大小 规格书
5页 79K
描述
Small Signal Switching Diodes, High Voltage

BAV21WS-V-G 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.58外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.4 W
认证状态:Not Qualified最大重复峰值反向电压:250 V
最大反向电流:0.1 µA最大反向恢复时间:0.05 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BAV21WS-V-G 数据手册

 浏览型号BAV21WS-V-G的Datasheet PDF文件第2页浏览型号BAV21WS-V-G的Datasheet PDF文件第3页浏览型号BAV21WS-V-G的Datasheet PDF文件第4页浏览型号BAV21WS-V-G的Datasheet PDF文件第5页 
BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
Features  
• Silicon epitaxial planar diodes  
• For general purpose  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC  
and in accordance to WEEE 2002/96/EC  
20145  
Mechanical Data  
Case: SOD-323  
Weight: approx. 4 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
Parts Table  
Part  
Type differentiation  
VR = 100 V  
Ordering code  
Type Marking  
Remarks  
BAV19WS-V-G  
BAV20WS-V-G  
BAV21WS-V-G  
BAV19WS-V-G-18 or BAV19WS-V-G-08  
BAV20WS-V-G-18 or BAV20WS-V-G-08  
BAV21WS-V-G-18 or BAV21WS-V-G-08  
AS  
AT  
AU  
Tape and reel  
Tape and reel  
Tape and reel  
V
V
R = 150 V  
R = 200 V  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
Symbol  
Value  
100  
150  
200  
120  
200  
250  
Unit  
V
VR  
VR  
BAV19WS-V-G  
BAV20WS-V-G  
BAV21WS-V-G  
BAV19WS-V-G  
BAV20WS-V-G  
BAV21WS-V-G  
Continuous reverse voltage  
V
VR  
V
VRRM  
VRRM  
VRRM  
IF  
V
Repetitive peak reverse voltage  
Forward continuous current  
V
V
250 1)  
mA  
Rectified current (average) half  
wave rectification with resist.  
load  
200 1)  
IF(AV)  
mA  
625 1)  
1
IFRM  
IFSM  
Ptot  
Repetitive peak forward current  
Surge forward current  
Power dissipation  
f 50 Hz, = 180°  
mA  
A
t < 1 s, Tj = 25 °C  
200 1)  
mW  
Note  
1) Valid provided that leads are kept at ambient temperature  
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902  
Document Number 83423  
Rev. 1.0, 14-Mar-11  
www.vishay.com  
1
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  

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