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BAV21WS-G

更新时间： 2024-11-22 01:24:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 91K
描述
Small Signal Switching Diodes, High Voltage

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BAV21WS-G 数据手册

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BAV19WS-G, BAV20WS-G, BAV21WS-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
FEATURES  
• Silicon epitaxial planar diodes  
• For general purpose  
• AEC-Q101 qualified  
• Base P/N-G3 - green, commercial grade  
• Base P/N-HG3 - green, AEC-Q101 qualified  
(part number available on request)  
MECHANICAL DATA  
• Material categorization:  
for definitions of compliance please see  
Case: SOD-323  
www.vishay.com/doc?99912  
Weight: approx. 4 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
TYPE  
DIFFERENTIATION  
INTERNAL  
TYPE MARKING  
PART  
ORDERING CODE  
REMARKS  
CONSTRUCTION  
BAV19WS-G  
BAV20WS-G  
BAV21WS-G  
VR = 100 V  
VR = 150 V  
VR = 200 V  
BAV19WS-G3-08 or BAV19WS-G3-18  
BAV20WS-G3-08 or BAV20WS-G3-18  
BAV21WS-G3-08 or BAV21WS-G3-18  
AS  
AT  
AU  
Single diode  
Single diode  
Single diode  
Tape and reel  
Tape and reel  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
SYMBOL  
VR  
VALUE  
UNIT  
BAV19WS-G  
BAV20WS-G  
BAV21WS-G  
BAV19WS-G  
BAV20WS-G  
BAV21WS-G  
100  
150  
200  
120  
200  
250  
250  
V
V
Continuous reverse voltage  
VR  
VR  
V
VRRM  
VRRM  
VRRM  
IF  
V
Repetitive peak reverse voltage  
Forward continuous current (1)  
V
V
mA  
Rectified current (average) half wave  
rectification with resistive load (1)  
IF(AV)  
200  
mA  
Repetitive peak forward current (1)  
f 50 Hz, = 180°  
IFRM  
IFSM  
Ptot  
625  
1
mA  
A
Surge forward current  
t < 1 s, TJ = 25 °C  
Power dissipation  
200  
mW  
Note  
(1)  
Valid provided that leads are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
RthJL  
Tj  
VALUE  
625  
UNIT  
Thermal resistance junction to ambient air  
Thermal resistance junction to lead  
Junction temperature  
K/W  
K/W  
°C  
450  
150  
Storage temperature range  
Operating temperature range  
Tstg  
-65 to +150  
-55 to +150  
°C  
Top  
°C  
Rev. 1.6, 27-Sep-16  
Document Number: 83423  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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BAV21WS-G3-08 VISHAY

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 		Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, GREEN PACKAGE-2
BAV21WS-G3-18 VISHAY

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 		DIODE GEN PURP 200V 250MA SOD323
BAV21WS-GS08 VISHAY

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 		Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-2
BAV21WS-GS18 VISHAY

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 		Rectifier Diode, 1 Element, 0.2A, 250V V(RRM),
BAV21WSHE3 MCC

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 		Tape&Reel: 3Kpcs/Reel;
BAV21WS-HE3-08 VISHAY

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 		Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
BAV21WS-HE3-18 VISHAY

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 		DIODE GEN PURP 200V 250MA SOD323
BAV21WSQ YANGJIE

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 		SOD-323
BAV21WS-Q1 ANBON

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 		SOD-323
BAV21WS-T1 WTE

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 		SURFACE MOUNT FAST SWITCHING DIODE

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