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BAV21WS-HE3-18 PDF预览

BAV21WS-HE3-18

更新时间： 2024-11-18 22:04:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 83K
描述
DIODE GEN PURP 200V 250MA SOD323

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中文翻译

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BAV21WS-HE3-18 数据手册

 浏览型号BAV21WS-HE3-18的Datasheet PDF文件第2页浏览型号BAV21WS-HE3-18的Datasheet PDF文件第3页浏览型号BAV21WS-HE3-18的Datasheet PDF文件第4页 
BAV19WS, BAV20WS, BAV21WS  
www.vishay.com  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
FEATURES  
• Silicon epitaxial planar diodes  
• For general purpose  
• AEC-Q101 qualified available  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101  
qualified  
DESIGN SUPPORT TOOLS click logo to get started  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Models  
Available  
MECHANICAL DATA  
Case: SOD-323  
Weight: approx. 4.3 mg  
Packaging codes / options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
TYPE  
CIRCUIT  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
Tape and reel  
Tape and reel  
Tape and reel  
DIFFERENTIATION  
CONFIGURATION  
BAV19WS-E3-08 or BAV19WS-E3-18  
BAV19WS-HE3-08 or BAV19WS-HE3-18  
BAV19WS  
BAV20WS  
BAV21WS  
VR = 100 V  
A8  
A9  
AA  
Single  
BAV20WS-E3-08 or BAV20WS-E3-18  
BAV20WS-HE3-08 or BAV20WS-HE3-18  
V
V
R = 150 V  
R = 200 V  
Single  
Single  
BAV21WS-E3-08 or BAV21WS-E3-18  
BAV21WS-HE3-08 or BAV21WS-HE3-18  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VALUE  
100  
UNIT  
BAV19WS  
BAV20WS  
BAV21WS  
BAV19WS  
BAV20WS  
BAV21WS  
VR  
V
V
Continuous reverse voltage  
VR  
150  
VR  
200  
V
VRRM  
VRRM  
VRRM  
IF  
120  
V
Repetitive peak reverse voltage  
Forward continuous current (1)  
200  
V
250  
V
250  
mA  
Rectified current (average) half wave  
IF(AV)  
200  
mA  
rectification with resistive load (1)  
Repetitive peak forward current (1)  
Surge forward current  
f ≥ 50 Hz, θ = 180°  
t < 1 s, TJ = 25 °C  
IFRM  
IFSM  
Ptot  
625  
1
mA  
A
Power dissipation  
200  
mW  
Note  
(1)  
Valid provided that leads are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
RthJL  
Tj  
VALUE  
625  
UNIT  
K/W  
K/W  
°C  
Thermal resistance junction to ambient air  
Thermal resistance junction to lead  
Junction temperature  
450  
150  
Storage temperature range  
Operating temperature range  
Tstg  
-65 to +150  
-55 to +150  
°C  
Top  
°C  
Rev. 2.2, 12-Jul-17  
Document Number: 85726  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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