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BAV21WS PDF预览

BAV21WS

更新时间: 2024-11-18 06:41:31
品牌 Logo 应用领域
EIC 信号二极管
页数 文件大小 规格书
2页 37K
描述
SMALL SIGNAL DIODES

BAV21WS 数据手册

 浏览型号BAV21WS的Datasheet PDF文件第2页 
SMALL SIGNAL DIODES  
BAV19WS ~ BAV21WS  
SOD-323  
PRV : 100 Volts  
Io : 250 mA  
0.012 (0.3)  
FEATURES :  
* Silicon Epitaxial Planar Diode  
* For General Purpose  
* Pb / RoHS Free  
0.059 (1.5)  
0.043 (1.1)  
MECHANICAL DATA :  
* Case : SOD-323 plastic Case  
min. 0.010 (0.25)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VR  
BAV19WS BAV20WS BAV21WS  
Unit  
V
Reverse Voltage  
100  
120  
150  
200  
200  
VRM  
Peak Reverse Voltage  
250  
V
Rectified Current (Average)  
Half Wave Rectification with Resist. Load  
at Tamb = 25 °C and f ³ 50 Hz  
Surge Forward Current at t < 1 s and Tj = 25 °C  
Power Dissipation at Tamb = 25 °C  
Junction Temperature  
IF(AV)  
250  
mA  
IFSM  
Ptot  
Tj  
1.0  
A
mW  
°C  
200 1)  
150  
TS  
Storage Temperature Range  
-65 to + 175  
°C  
ELECTRICAL CHARACTERISTICS (Rating at Tj = 25 °C unless otherwise specified)  
Test Condition  
Min. Typ. Max. Unit  
Parameter  
Symbol  
IF = 100 mA  
-
-
-
-
-
-
-
-
-
-
-
-
1
V
V
VF  
Forward Voltage  
Leakage Current  
IF = 200 mA  
1.25  
100  
100  
100  
1.5  
VR = 100 V  
BAV19WS  
BAV20WS  
BAV21WS  
IR  
VR = 150 V  
nA  
VR = 200 V  
Ctot  
Trr  
VF = VR = 0 V  
IF = 30 mA, IR = 30mA  
Irr = 3 mA, RL = 100W  
Capacitance  
pF  
ns  
Reverse Recovery Time  
-
-
50  
Note : 1) Valid provided that electrodes are kept at ambient temperature  
Page 1 of 2  
Rev. 03 : March 25, 2005  

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