Datasheet > BAV19WS_12

BAV19WS_12

更新时间： 2024-10-14 12:51:31

品牌	Logo	应用领域
威世 - VISHAY		小信号开关二极管高压
页数	文件大小	规格书
4页	84K
描述
Small Signal Switching Diodes, High Voltage

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中文翻译

获取价格

数据手册

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BAV19WS_12 数据手册

BAV19WS-V, BAV20WS-V, BAV21WS-V

www.vishay.com

Vishay Semiconductors

Small Signal Switching Diodes, High Voltage

FEATURES

• Silicon epitaxial planar diodes

• For general purpose

• These diodes are also available in other case

styles including: the DO-35 case with the type

designation BAV19 to BAV21, the MiniMELF

case with the type designation BAV100 to

BAV103, the SOT-23 case with the type designation

BAS19 to BAS21 and the SOD-123 case with the type

designation BAV19W-V to BAV21W-V

MECHANICAL DATA

• AEC-Q101 qualified

Case: SOD-323

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Weight: approx. 4.3 mg

Packaging codes/options:

GS18/10K per 13" reel (8 mm tape), 10K/box

GS08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

TYPE

DIFFERENTIATION

INTERNAL

CONSTRUCTION

PART

ORDERING CODE

TYPE MARKING

REMARKS

BAV19WS-V

BAV20WS-V

BAV21WS-V

_R= 100 V

_R= 150 V

_R= 200 V

BAV19WS-V-GS18 or BAV19WS-V-GS08

BAV20WS-V-GS18 or BAV20WS-V-GS08

BAV21WS-V-GS18 or BAV21WS-V-GS08

Single diode

Tape and reel

Single diode

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

100

UNIT

BAV19WS-V

BAV20WS-V

BAV21WS-V

BAV19WS-V

BAV20WS-V

BAV21WS-V

V_R

Continuous reverse voltage

V_R

150

V_R

200

V_RRM

I_F

120

Repetitive peak reverse voltage

Forward continuous current ⁽¹⁾

200

250

Rectified current (average) half wave

recitification with resistive load ⁽¹⁾

I_F(AV)

200

Repetitive peak forward current ⁽¹⁾

f 50 Hz,  = 180 °C

I_FRM

I_FSM

P_tot

625

Surge forward current

Power dissipation ⁽¹⁾

t < 1 s, T_J= 25 °C

200

Note

(1)

Valid provided that leads are kept at ambient temperature

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

650

UNIT

K/W

°C

Thermal resistance junction to ambient air ⁽¹⁾

Junction temperature ⁽¹⁾

150

Storage temperature range ⁽¹⁾

T_stg

- 65 to + 175

°C

Note

(1)

Valid provided that leads are kept at ambient temperature

Rev. 1.5, 02-Aug-12

Document Number: 85726

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与BAV19WS_12相关器件

型号	品牌	获取价格	描述	数据表
BAV19WS_13	MCC	获取价格	250mW Small Signal Diodes 120 to 250 Volts
BAV19WS_15	TSC	获取价格	200mW High Voltage SMD Switching Diode
BAV19WS_15	WINNERJOIN	获取价格	SOD-323
BAV19WS_16	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
BAV19WS_17	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAV19WS_18	HDSEMI	获取价格	S O D323 Plastic-Encapsulate Diodes
BAV19WS_R1_00001	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
BAV19WS_R2_00001	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
BAV19WS~BAV21WS	SEMIPOWER	获取价格	Diodes
BAV19WS-13	DIODES	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, PLASTIC PACKAGE-2

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