Datasheet > BAV19WS_15

BAV19WS_15

更新时间： 2024-12-01 01:22:07

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	210K
描述
200mW High Voltage SMD Switching Diode

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中文翻译

获取价格

数据手册

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BAV19WS_15 数据手册

BAV19WS/BAV20WS/BAV21WS

Taiwan Semiconductor

Small Signal Product

200mW High Voltage SMD Switching Diode

FEATURES

- Surface mount device type

- Moisture sensitivity level 1

- Matte tin (Sn) lead finish

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

SOD-323F

MECHANICAL DATA

- Case: Flat lead SOD-323F small outline plastic package

- Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed : 260°C/10s

- Polarity: Indicated by cathode band

- Weight: 4.5 ± 0.5 mg

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

PARAMETER

VALUE

SYMBOL

P_D

UNIT

Power Dissipation

200

Repetitive Peak Reverse Voltage

Average Rectified Forward Current

V_RRM

250

I_F(AV)

200

Pulse Width = 1 μs

2.5

Non-Repetitive Peak Forward

Surge Current

I_FSM

Pulse Width = 1 s

0.5

^oC

Junction and Storage Temperature Range

T_J, T_STG

-65 to 150

PARAMETER

MIN

120

200

250

MAX

SYMBOL

UNIT

BAV19WS

BAV20WS

BAV21WS

I_F=100mA

Breakdown Voltage

(Note 1)

V_R

V_F

Forward Voltage

I_F=200mA

BAV19WS

BAV20WS

BAV21WS

V_R=0, f=1.0MHz

Reverse Leakage Current

(Note 2)

I_R

100

Junction Capacitance

C_J

t_rr

Reverse Recovery Time (Note 3)

Note 1: Test condition : I_R= 100μA

Note 2: Test condition : BAV19WS @ V_R=100V, BAV20WS @ V_R=150V, BAV21WS @ V_R=200V

Note 3: Test condition : I_F= I_R= 30mA , R_L=100Ω , Irr=3mA

Document Number: DS_S1501004

Version: D15

12 3 4

中文翻译

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