Datasheet > BAV19WS_18

BAV19WS_18

更新时间： 2024-11-19 01:26:15

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海德 - HDSEMI		/
页数	文件大小	规格书
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描述
S O D323 Plastic-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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BAV19WS_18 数据手册

BAV19WS~BAV21WS

SOD323 Plastic-Encapsulate Diodes

Small Signal Fast Switching Diodes

Features

SOD3 23

●

Low Reverse Current

Surface Mount Package Ideally Suited for Automatic Insertion

Fast Switching Speed

For General Purpose Switching Applications

Applications

●

Extreme fast switches

Marking

●

BAV19WS: A8

BAV20WS:

BAV21WS:

Value

Symbol

Parameter

Unit

BAV19WS

BAV20WS BAV21WS

V_RM

V_RRM

V_RWM

V_R(RMS)

I_O

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

RMS Reverse Voltage

120

200

150

106

250

200

141

100

Average Rectified Output Current

Non-repetitive Peak Forward Surge Current @ t=8.3ms

Power Dissipation

200

I_FSM

P_D

2.0

250

R_ΘJA

T_j

Thermal Resistance from Junction to Ambient

Junction Temperature

500

℃/W

℃

150

Storage Temperature

℃

T_stg

-55~+150

Electrical Characteristics (T =25 unless otherwise noted)

℃

Typ

Parameter

Symbol

Test conditions

Min

Max

Unit

V_R=100V

V_R=150V

V_R=200V

I_F=100mA

I_F=200mA

BAV19WS

BAV20WS

BAV21WS

0.1

Reverse current

I_R

Forward voltage

V_F

1.25

Total capacitance

C_tot

t_rr

V_R=0V,f=1MHz

I_F= I_R=30mA, I_rr=0.1*I_R, R_L=100Ω

Reverse recovery time

igh Diode Semiconductor

12 3 4

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