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BAV19WS PDF预览

BAV19WS

更新时间: 2024-11-17 22:09:23
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管信号二极管光电二极管
页数 文件大小 规格书
2页 48K
描述
Surface mount Small Signal Diodes

BAV19WS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:1.29
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:120 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAV19WS 数据手册

 浏览型号BAV19WS的Datasheet PDF文件第2页 
BAV19WS ... BAV21WS  
Small Signal Si-Diodes  
Surface mount Small Signal Diodes  
Kleinsignal-Dioden für die Oberflächenmontage  
Version 2004-04-09  
Power dissipation – Verlustleistung  
200 mW  
1.7  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
120...250 V  
Plastic case  
Kunststoffgehäuse  
SOD-323  
0.005 g  
Type  
Code  
Weight approx. – Gewicht ca.  
2.5±0.2  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
BAV19WS, BAV20WS, BAV21WS  
Power dissipation – Verlustleistung  
Ptot  
IFAV  
IFRM  
200 mW 1)  
Max. average forward current (dc)  
Dauergrenzstrom  
200 mA 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
625 mA 1)  
Peak forward surge current  
Stoßstrom-Grenzwert  
tp 1 s  
tp 1 µs  
IFSM  
IFSM  
1 A  
2.5 A  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
BAV19WS  
BAV20WS  
BAV21WS  
VRRM  
VRRM  
VRRM  
120 V  
200 V  
250 V  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
150°C  
TS  
- 55…+ 150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Forward voltage 2)  
Durchlaßspannung  
IF = 100 mA VF  
IF = 200 mA VF  
< 1 V  
< 1.25 V  
Leakage current 2)  
Sperrstrom  
BAV19WS  
Tj = 25°C BAV20WS  
BAV21WS  
VR = 100 V  
VR = 150 V  
VR = 200 V  
IR  
< 100 nA  
< 15 µA  
BAV19WS  
Tj = 150°C BAV20WS  
BAV21WS  
VR = 100 V  
VR = 150 V  
VR = 200 V  
IR  
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%  
1

BAV19WS 替代型号

型号 品牌 替代类型 描述 数据表
BAV19W WON-TOP

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BAV19WS-HE3-08 VISHAY

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Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

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