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BAV19WS PDF预览

BAV19WS

更新时间: 2024-11-17 22:09:23
品牌 Logo 应用领域
威世 - VISHAY 信号二极管光电二极管
页数 文件大小 规格书
4页 121K
描述
SMALL SIGNAL DIODES

BAV19WS 数据手册

 浏览型号BAV19WS的Datasheet PDF文件第2页浏览型号BAV19WS的Datasheet PDF文件第3页浏览型号BAV19WS的Datasheet PDF文件第4页 
NEW PRODUCT  
NEW PRODUCT  
NEW PRODUCT  
BAV19WS THRU BAV21WS  
SMALL SIGNAL DIODES  
FEATURES  
SOD-323  
Silicon Epitaxial Planar Diodes  
.012 (0.3)  
For general purpose  
Cathode Mark  
These diodes are also available in other case styles  
including: the DO-35 case with the type designations  
BAV19 to BAV21, the Mini-MELF case with the type  
designations BAV100 to BAV103, the SOT-23 case with  
the type designation BAS19 - BAS21 and the SOD-123  
case with the type designation BAV19W-BAV21W.  
Top View  
.059 (1.5)  
.043 (1.1)  
min. .010 (0.25)  
MECHANICAL DATA  
Case: SOD-323 Plastic Case  
Weight: approx. 0.004 g  
Marking Code: BAV19WS=A8  
BAV20WS=A81  
Dimensions are in inches and (millimeters)  
BAV21WS=A82  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOLS  
VALUE  
UNITS  
Continuous Reverse Voltage  
BAV19WS  
BAV20WS  
BAV21WS  
VR  
VR  
VR  
100  
150  
200  
Volts  
Volts  
Volts  
Repetitive Peak Reverse Voltage  
BAV19WS  
BAV20WS  
BAV21WS  
VRRM  
VRRM  
VRRM  
120  
200  
250  
Volts  
Volts  
Volts  
Forward DC Current at Tamb = 25 °C  
IF  
2501)  
mA  
Rectified Current (Average)  
Half Wave Rectification with Resist. Load  
Io  
2001)  
mA  
at T  
= 25 °C and f 50 Hz  
amb  
Repetitive Peak Forward Current  
IFRM  
6251)  
mA  
at f 50 Hz, Θ = 180 °, Tamb = 25 °C  
Surge Forward Current at t < 1 s, Tj = 25 °C  
Power Dissipation at Tamb = 25 °C  
Junction Temperature  
IFSM  
Ptot  
Tj  
1
2001)  
Amps  
mW  
°C  
1501)  
Storage Temperature Range  
TS  
–65 to + 1501)  
°C  
NOTES:  
(1) Valid provided that electrodes are kept at ambient temperature  
12/11/98  

BAV19WS 替代型号

型号 品牌 替代类型 描述 数据表
BAV19WS-V-GS18 VISHAY

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