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BAV19WS PDF预览

BAV19WS

更新时间: 2024-11-25 02:55:23
品牌 Logo 应用领域
海德 - HDSEMI 光电二极管
页数 文件大小 规格书
4页 1887K
描述
S O D323 Plastic-Encapsulate Diodes

BAV19WS 数据手册

 浏览型号BAV19WS的Datasheet PDF文件第2页浏览型号BAV19WS的Datasheet PDF文件第3页浏览型号BAV19WS的Datasheet PDF文件第4页 
BAV19WS~BAV21WS  
SOD323 Plastic-Encapsulate Diodes  
Small Signal Fast Switching Diodes  
Features  
SOD3 23  
Low Reverse Current  
Surface Mount Package Ideally Suited for Automatic Insertion  
Fast Switching Speed  
For General Purpose Switching Applications  
Applications  
Extreme fast switches  
Marking  
BAV19WS: A8  
T2  
T3  
BAV20WS:  
BAV21WS:  
Value  
Symbol  
Parameter  
Unit  
BAV19WS  
BAV20WS BAV21WS  
VRM  
VRRM  
VRWM  
VR(RMS)  
IO  
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
RMS Reverse Voltage  
120  
200  
150  
106  
250  
200  
141  
V
100  
71  
V
V
mA  
A
Average Rectified Output Current  
Non-repetitive Peak Forward Surge Current @ t=8.3ms  
Power Dissipation  
200  
IFSM  
PD  
2.0  
250  
mW  
RΘJA  
Tj  
Thermal Resistance from Junction to Ambient  
Junction Temperature  
500  
/W  
150  
Storage Temperature  
Tstg  
-55~+150  
Electrical Characteristics (T =25 unless otherwise noted)  
A
Typ  
Parameter  
Symbol  
Test conditions  
Min  
Max  
Unit  
VR=100V  
VR=150V  
VR=200V  
IF=100mA  
IF=200mA  
BAV19WS  
BAV20WS  
BAV21WS  
0.1  
0.1  
0.1  
1
Reverse current  
IR  
uA  
V
Forward voltage  
VF  
1.25  
5
Total capacitance  
Ctot  
trr  
VR=0V,f=1MHz  
IF= IR =30mA, Irr=0.1*IR , RL=100  
pF  
ns  
Reverse recovery time  
50  
1
H
igh Diode Semiconductor  

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